| 发明名称 |
METHOD OF HEAT TREATMENT |
| 摘要 |
<p>A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750 DEG C. <IMAGE></p> |
| 申请公布号 |
EP1143494(A1) |
申请公布日期 |
2001.10.10 |
| 申请号 |
EP20000954982 |
申请日期 |
2000.08.24 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO, HITOSHI;FUJITA, YOSHIYUKI;TOJO, YUKIO;TSUDA, TOSHITAKE |
| 分类号 |
H01L27/04;H01L21/02;H01L21/223;H01L21/3215;H01L21/822;H01L21/8242;(IPC1-7):H01L21/321 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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