FERROELECTRIC THIN FILM ELEMENT, SENSOR AND METHOD OF MANUFACTURING FERROELECTRIC THIN FILM ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a small ferroelectric thin film element which has a superior performance and is easy to process cheaply, a sensor using the same and a method of manufacturing the ferroelectric thin film element. SOLUTION: Buffer layers are formed on an Si substrate, thereby orienting or epitaxially growing metal thin films and ferroelectric thin films through the buffer layers one after another, and the Si substrate and buffer layers are partly removed to form a small ferroelectric thin film element having a superior performance using various etching techniques.