| 摘要 |
PROBLEM TO BE SOLVED: To provide the polishing method of a semiconductor wafer that can inhibit the sagging of the outer-periphery of the wafer for improving the degree of planarization of the wafer. SOLUTION: A wafer w1 for the active layer of a laminating SOI substrate W is pushed against the polishing operation surface of polishing cloth 11 for rotating a polishing plate 12 and a polishing head 13, and the polishing surface of the wafer w1 is polished. In this case, chamfering space (a) of the wafer w1 is buried with a covering material 16 made of wax having a faster polishing speed than the wafer w1 in advance, thus inhibiting an amount of rebound R1 of the polishing cloth 11, hence preventing the outer periphery of the wafer w1 from being subjected to contact by the rebound of the polishing cloth 11, reducing the sagging of the outer periphery of the wafer w1, and increasing the degree of planarization of the wafer. |
