| 摘要 |
PURPOSE: A device for measuring the thickness of an oxide layer and a semiconductor manufacturing method using the same are provided to be capable of aligning the flat zone of a wafer to a predetermined direction by using a lift part. CONSTITUTION: The first support pins(420) are installed on a stage(410) for supporting a wafer(422), wherein the stage(410) is capable of horizontally shifting while revolving. A lamp(430) is located at the upper portion of the wafer(422) for measuring the thickness of the coated portion of the wafer(422). An aligner(440) is installed at one side of the wafer(422) for aligning the flat zone of the wafer(422). A lift part(450) is located adjacent to the stage(410) for moving the wafer(422) up and down. At this time, the stage(410) is capable of being optimized for aligning the flat zone of the wafer(422) to a predetermined direction. The lift part(450) includes a cylinder(452), a driving shaft(454) installed on the cylinder(452), a bar(456) installed on the driving shaft(454), and the second support pins located on the bar(456) for supporting the wafer(422).
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