COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a JFET having an excellent high-frequency characteristic. SOLUTION: A p-type impurity in a gate electrode is actively diffused in a p-type impurity diffusion layer. An electric pn-junction surface in a gate electrode region is formed in the p-type impurity diffusion layer or on the bottom surface thereof. Consequently, an influence of an interface state generated at a regrowth interface on the pn-junction surface is suppressed.