| 摘要 |
PURPOSE: A method of cleaning a pad is to remove copper oxides remaining on the pad, without causing damage to the pad, when performing a CMP(chemical mechanical polishing) process using copper. CONSTITUTION: A wafer is loaded onto a table(1) and then polished using a CMP process. After the polishing process is completed, a pad cleaning process is started. When performing the pad cleaning process, a cleaning solution is supplied from a cleaning solution tank(4) to the table through a tube(3). The cleaning solution comprises NH4OH or diluted acid such as citric acid. The cleaning solution dissolves copper oxides such as Cu2O and CuO which are adhered to the pad, thus removing them from the pad.
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