发明名称 |
Method of programming a semiconductor memory |
摘要 |
A method of programming a semiconductor memory includes forming a multiplicity of fuse links in at least two mutually parallel planes in a semiconductor body, and separating the fuse links from one another with an electrical insulator. It also includes irradiating a selected fuse link with at least two laser beams and melting the selected fuse link by crossing the laser beams at the selected fuse link.
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申请公布号 |
US6274410(B2) |
申请公布日期 |
2001.08.14 |
申请号 |
US20000729068 |
申请日期 |
2000.12.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GOEBEL HOLGER;KRAUSE GUNNAR |
分类号 |
H01L21/82;G11C17/14;H01L27/10;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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