METHOD FOR FABRICATING MFS FET

摘要

PURPOSE: A method for fabricating an MFS FET(Metal Ferroelectric Semiconductor Field Effect Transistor) is provided to improve a retention of a ferroelectric thin film by forming a preferred orientation of a BaMgF4 ferroelectric thin film to a polarizing axis. CONSTITUTION: A BaMgF4 ferroelectric thin film(1) is deposited on an upper portion of a semiconductor substrate(5) under a low temperature of 0 to 450 degrees centigrade. The BaMgF4 ferroelectric thin film(1) has a crystalline structure of an amorphous phase. An electrode layer(2) such as a conductive ceramic layer or a metal layer is formed on the BaMgF4 ferroelectric thin film(1). An electric field is applied between the electrode layer(2) and the semiconductor substrate(5) by using a direct and alternating pulse voltage device(6). The crystalline structure of a ferroelectric is formed by applying the electric field between the electrode layer(2) and the semiconductor substrate(5).