发明名称 |
Semiconductor protection device and power converting system |
摘要 |
A semiconductor protection device is used to suppress a surge voltage to a preset value or less, the surge voltage being caused at each turn-OFF time of 50 Hz to 20 kHz of a main IGBT functioning as a switch of a power converting system. The semiconductor protection device includes a protection IGBT for forming a bypass connected in parallel with the main IGBT and an electric field sensing element connected in a reverse direction between the collector of the main IGBT and the gate of the protection IGBT. When the surge voltage exceeds a preset value which is a breakdown voltage of the electric field sensing element, the protection IGBT is turned ON so as to cause a current generated by energy of the surge voltage to be bypassed.
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申请公布号 |
US6268990(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19990339214 |
申请日期 |
1999.06.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OGURA TSUNEO;HOSHI KIMIHIRO |
分类号 |
H01L27/04;H01L21/822;H03K17/08;H03K17/0814;(IPC1-7):H02F3/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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