发明名称 Semiconductor protection device and power converting system
摘要 A semiconductor protection device is used to suppress a surge voltage to a preset value or less, the surge voltage being caused at each turn-OFF time of 50 Hz to 20 kHz of a main IGBT functioning as a switch of a power converting system. The semiconductor protection device includes a protection IGBT for forming a bypass connected in parallel with the main IGBT and an electric field sensing element connected in a reverse direction between the collector of the main IGBT and the gate of the protection IGBT. When the surge voltage exceeds a preset value which is a breakdown voltage of the electric field sensing element, the protection IGBT is turned ON so as to cause a current generated by energy of the surge voltage to be bypassed.
申请公布号 US6268990(B1) 申请公布日期 2001.07.31
申请号 US19990339214 申请日期 1999.06.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGURA TSUNEO;HOSHI KIMIHIRO
分类号 H01L27/04;H01L21/822;H03K17/08;H03K17/0814;(IPC1-7):H02F3/20 主分类号 H01L27/04
代理机构 代理人
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