| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which ion implantation is ensured even when ions are implanted into the side surface of a bipolar transistor arranged in the different direction. SOLUTION: A surface of a base emitter formation side wall a705 of an NPN bipolar transistor a701 is not made parallel to a side wall surface of a collector electrode formation side wall a706 on the opposite side of the NPN bipolar transistor a701, and a distance between the side walls a705 and a706 is made smaller gradually toward a direction for arranging the emitter, base, and collector.
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