| 摘要 |
PROBLEM TO BE SOLVED: To efficiently remove aluminum series impurities adsorbed on a silicon dioxide film in a method for depositing a silicon dioxide film by an aluminum melting method and to deposit a silicon dioxide film of high quality. SOLUTION: In the method for depositing a silicon dioxide film, a base material is brought into contact with a treating solution composed of a solution of silicofluoric acid in which a silicon dioxide film is made into a supersaturated state by melting aluminum to deposit a film of silicon dioxide on the surface of the base material, and, after that, the base material is cleaned. At the time of cleaning the base material, the solution adhered on the surface of the base material is cleaned in a state in which its pH is held to acidity of 5 or less.
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