发明名称 |
Electronic interconnect structure and method for manufacturing it |
摘要 |
A process for manufacturing an electronic interconnect structure, the process including the steps of depositing an adhesion metal layer over a dielectric material surface having at least one exposed aluminum surface; depositing a barrier metal layer over the adhesion metal layer; depositing a first layer of aluminum over the barrier metal layer; depositing an intermediate barrier metal layer over the first layer of aluminum; applying a photoresist layer on top of the intermediate barrier metal layer; exposing and developing the photoresist layer; removing the exposed barrier metal and photoresist layer, leaving a layer of barrier metal over the aluminum layer; converting those portions of the layer of aluminum which are not covered by barrier metal to a porous aluminum oxide by porous anodization; removing the porous aluminum oxide; and removing the exposed barrier metal and adhesion metal layers to leave exposed patterned aluminum, and an electronic interconnect structure manufactured by this method.
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申请公布号 |
US6262478(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US19990310328 |
申请日期 |
1999.05.12 |
申请人 |
AMITEC-ADVANCED MULTILAYER INTERCONNECT TECHNOLOGIES LTD. |
发明人 |
HURWITZ DROR;IGNER EVA;YOFIS BORIS;KATZ DROR |
分类号 |
H01L21/768;H01L23/532;H01L23/538;(IPC1-7):H01L23/053 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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