发明名称 |
Improved purity silicon wafer for use in advanced semiconductor devices |
摘要 |
A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.
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申请公布号 |
US2001007241(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
US20010759029 |
申请日期 |
2001.01.11 |
申请人 |
SEH AMERICA, INC |
发明人 |
DIETZE GERALD R.;HANNA SEAN G.;RADZIMSKI ZBIGNIEW J. |
分类号 |
C23C16/455;C23C16/458;C23C16/48;C30B25/12;C30B31/14;H01L21/687;(IPC1-7):C30B23/00 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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