An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

摘要

The method involves forming a resistive current path connected to the base of the wide base transistor. A current in the resistive current path is provided such that it exceeds the induced currents related to the temperature or the dV/dT of the device, so as to reduce breakdown voltage dependence on temperature and dV/dT. The resistive current path connects the base of the wide base transistor to a collector of the wide base transistor. The resistive current path connects the base of the wide base transistor to an emitter of the wide base transistor. The resistive current path is, at least in part, external to the semiconductor power device.