| 摘要 |
PURPOSE: A method for forming a charge storage electrode of a semiconductor device is provided to reduce a manufacturing time by forming efficiently a charge storage electrode. CONSTITUTION: An interlayer dielectric(21) is formed on a semiconductor substrate(20). The semiconductor substrate(20) is exposed by forming a contact hole. A contact plug(22) is formed on the contact hole. The first protective layer(23), an insulating layer(24), and the second protective layers are deposited on an upper portion of the whole structure. A hole is formed to expose the first protective layer(23) by removing partially the second protective layer and the insulating layer(24). The exposed protective layers are removed. A metal layer(26) is deposited on the upper portion of the whole structure including the hole. The insulating layer(24) is exposed by performing a chemical mechanical polishing process. A charge storage electrode is formed by removing the insulating layer(24).
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