| 摘要 |
<p>A method for removing polymer deposits from the interior of a dielectric etch chamber and from a wafer disposed within the dielectric chamber, as well as removal of photoresist from a wafer disposed within the dielectric etch chamber. A flow of gases comprising ozone is introduced into the dielectric etch chamber. The ozone is dissociated into oxygen atoms and O2 to strip the deposits from the chamber and wafer. A second flow of gases comprising argon and/or nitrogen gas may be added to facilitate the ozone dissociation, which increases the oxygen atom population and more effectively removes deposits.</p> |
