METHOD FOR MANUFACTURING METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal layer of a semiconductor device is provided to improve reliability of the device, by minimizing generation of a void caused by overhang at an inlet of a contact hole. CONSTITUTION: The first barrier layer(44a) is formed on an insulating layer pattern(42) including a contact hole to protect a metal interconnection. The first barrier layer is entirely etched to have a thickness thinner than the initial thickness of the first barrier layer. The second barrier layer is formed on the etched first barrier layer to protect the metal interconnection. A metal layer to be used as a metal interconnection is formed on the second barrier layer, filled in the contact hole.