发明名称 |
TUNNEL NITRIDE FOR IMPROVED POLYSILICON EMITTER |
摘要 |
A method is disclosed for reproducibly and controllably enhancing the current gain of a bipolar junction transistor. Prior to depositing an extrinsic emitter region of polycrystalline silicon, the surface of a monocrystalline silicon substrate (65) is nitridized to grow a layer of silicon nitride (55) thereon. The interfacial layer of silicon nitride (75) functions as a tunnel insulator to enhance the current gain of the transistor and as a diffusion barrier to prevent thickening of the tunnel insulator due to the growth of a native oxide (80) layer while exposed to an oxygen-containing atmosphere. The ubiquitous native silicon oxide (80) on the surface of the monocrystalline silicon substrate (65) may be optionally removed either before nitridation or after nitridation.
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申请公布号 |
WO0147006(A1) |
申请公布日期 |
2001.06.28 |
申请号 |
WO2000US42707 |
申请日期 |
2000.12.08 |
申请人 |
SONY ELECTRONICS INC. |
发明人 |
RICHARDSON, WILLIAM, F.;DUONG, ANHKIM |
分类号 |
H01L21/318;H01L21/331;H01L29/08;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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地址 |
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