发明名称 Methods of forming insulating materials, and methods of forming insulating materials around a conductive component
摘要 In one aspect, the invention encompasses a method of forming an insulating material around a conductive component. A first material is chemical vapor deposited over and around a conductive component. Cavities are formed within the first material. After the cavities are formed, at least some of the first material is transformed into an insulative second material. In another aspect, the invention encompasses a method of forming an insulating material. Polysilicon is deposited proximate a substrate. A porosity of the polysilicon is increased. After the porosity is increased, at least some of the polysilicon is transformed into silicon dioxide.
申请公布号 US6251470(B1) 申请公布日期 2001.06.26
申请号 US19970948372 申请日期 1997.10.09
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;AHN KIE Y.
分类号 H01L21/316;H01L21/768;(IPC1-7):B05D5/12 主分类号 H01L21/316
代理机构 代理人
主权项
地址