| 摘要 |
A process to selectively form silicon structures, such as a storage capacitor, by forming a conductive silicon, forming a silicon nitride layer on the conductive silicon substrate, forming a tungsten layer on the silicon nitride layer, patterning the tungsten layer and the silicon nitride layer to expose a underlying portion of the conductive silicon substrate, forming a continuous silicon film on the exposed portion of the conductive silicon substrate and on an adjacent portion of the silicon nitride layer while completely converting the tungsten layer to a tungsten silicide film by presenting a silicon source gas to the semiconductor memory assembly to form a continuous conductive silicon film used as a first capacitor electrode, forming a capacitor dielectric on the first capacitor electrode and the oxide layer, and forming a second capacitor electrode on the capacitor dielectric.
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