发明名称 POWER AMPLIFIER FOR PORTABLE TERMINALS
摘要 PURPOSE: A power amplifier for portable terminals is provided to extend a battery's life by precisely controlling a DC bias current that determines a PAE(Power Added Efficiency) of a power amplifier. CONSTITUTION: An HPA(High Power Amplifier) module(1), in which an HPA(11), a nonvolatile memory(12) and an output supervision circuit(13) are embedded, is configured as one chip. A GaAs-Fet is used for the HPA(11) as a power amplification element. An EEPROM(Electrically Erasable Programmable Read Only Memory) is used as the nonvolatile memory(12). In the nonvolatile memory(12), the static characteristic data of the GaAs-Fet are recorded in advance. Terminals 'Vd' and 'Vg' are to input drain voltage and gate voltage from a bias control circuit(2) to the HPA(11). A terminal 'P-monitor' is to output an output signal of the output supervision circuit(13) to the bias control circuit(2). A terminal 'CE' is to make the nonvolatile memory(12) chip-enabled so that the bias control circuit(2) can read data recorded in the nonvolatile memory(12). The bias control circuit(2) inputs the read data through a terminal 'Data'. A terminal 'clock' is to supply a clock signal from the bias control circuit(2) to the nonvolatile memory(12). The bias control circuit(2) confirms a transmitting power, the output of the HPA(11), by an output signal of the output supervision circuit(13) and controls a DC bias current of the GaAs-FET on the basis of the static characteristic data, read from the nonvolatile memory(12), according to the transmitting power.
申请公布号 KR20010039794(A) 申请公布日期 2001.05.15
申请号 KR20000045697 申请日期 2000.08.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HARUYAMASINIJJI
分类号 H03F3/20;H03F1/02;H03F3/193;H03G3/00;H03G3/30;H04B1/04;(IPC1-7):H04B1/40 主分类号 H03F3/20
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