| 摘要 |
PROBLEM TO BE SOLVED: To accurately control LDD length from the point of view of characteristics and reliability since a thin-film transistor with LDD structure is effective to achieve a fine thin-film transistor(TFT) with superior performance and excellent reliability. SOLUTION: On the side wall of a gate electrode, a side wall is formed by an insulating film being different from a gate insulating film. The shielding capability of an ion on implantation is increased by the side wall, n- and n+ layers are formed by a single ion injection, and LDD structure is realized, thus achieving a fine thin-film transistor with superior performance and excellent reliability.
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