| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor film, whose crystal azimuth is roughly aligned and whose crystal defects are reduced by forming a non-single crystal semiconductor thin film such as amorphous or polycrystals on a non-single crystal insulating film or a non-single crystal insulating substrate, and crystallizing it by adding energy. SOLUTION: A semiconductor film 3 having a constricted part 4 is formed on a substrate 1 on which a level difference 2 is formed, and crystal growth across the constricted part 4 and the level difference 2 is realized. Then, crystals whose azimuth is capable of easy crystal growth are selected at the constricted part 4 from among plural crystal cores generated at one side of the constricted part 4, and crystal defects such as dislocations generated at the core generation side is prevented from propagating to a region, where large crystals should be obtained at the level difference 2.
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