Method of forming a doped region in a semiconductor substrate

摘要

A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the frontside of the substrate is also heated, using rapid thermal processing during implantation. Implantation damage is simultaneously annealed during implantation, so that a subsequent anneal, if needed at all, is done using rapid thermal annealing.