CIRCUIT FOR DRIVING WORD LINES WITHIN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A circuit for driving word lines within a semiconductor memory device is provided to prevent activation of word lines which are not selected. CONSTITUTION: The circuit(520a) includes a control signal generator and a pre-word line driver(520a2). The control signal generator generates a switch control signal(DRAk_D) which is a combination of a decoding row address(DRAk) and a row activation signal(PRA). According to the switch control signal(DRAk_D) which activates after decoding addresses(DRAi,DRAj) activate, the pre-word line driver(520a2) continuously activates pre-word lines(PWL's) corresponding to the decoding addresses(DRAi<0:3>,DRAj). Thereby, the activation of word lines which are not selected can be prevented.