| 发明名称 |
Resurf LDMOS device with deep drain region |
| 摘要 |
A RESURF LDMOS transistor (32) has a drain region including a first region (24) and a deep drain buffer region (34) surrounding the first region. The first region is more heavily doped than the deep drain buffer region. The deep drain buffer region improves the robustness of the transistor.
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| 申请公布号 |
US6211552(B1) |
申请公布日期 |
2001.04.03 |
| 申请号 |
US19990320953 |
申请日期 |
1999.05.27 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EFLAND TAYLOR R.;PENDHARKAR SAMEER;MOSHER DAN M.;MEI PETER CHIA-CU |
| 分类号 |
H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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