| 发明名称 |
A method and apparatus for integrating a metal nitride film in a semiconductor device |
| 摘要 |
<p>The present invention describes a method of processing a substrate. According to the present invention a dielectric layer is formed on the substrate. The dielectric layer is then exposed in a first chamber to activated nitrogen atoms formed in a second chamber to form a nitrogen passivated dielectric layer. A metal nitride film is then formed on the nitrogen passivated dielectric layer. <IMAGE></p> |
| 申请公布号 |
EP1087430(A2) |
申请公布日期 |
2001.03.28 |
| 申请号 |
EP20000308405 |
申请日期 |
2000.09.25 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NARWANKAR, PRAVIN;SAHIN, TURGUT |
| 分类号 |
C23C16/34;C23C16/40;C23C16/46;H01L21/02;H01L21/28;H01L21/285;H01L21/31;H01L21/316;H01L21/768;H01L21/8242;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/285 |
主分类号 |
C23C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
