| 摘要 |
<p>A current mirror bias circuit for an RF amplifier transistor (12) is modified whereby the reference transistor (10) of the current mirror tracks hot carrier degradation in the RF transistor (12). Gate bias (+Vg) to the current mirror transistor is modified whereby the drain-to-gate voltage can be positive, and the lightly doped drain region (38) in the lateral n-channel reference transistor (10) is shortened and dopant concentration increased to increase the electric field of the reference transistor (10) to provide the hot carrier injection degradation characteristics similar to the main transistor (12). Additionally, the gate length of the reference transistor (10) can be shortened to effect the hot carrier injection degradation.</p> |
