| 摘要 |
PURPOSE: A method for manufacturing an interlayer dielectric of semiconductor device is provided to maintain quality of interlayer dielectric stably by preventing abnormality of layer surface. CONSTITUTION: An isolation region is defined by an oxide layer or a trench(12) on a silicon substrate(11). An N-MOS(Metal Oxide Semiconductor) or a P-MOS transistor, composed of a gate(G), a source(S), and a drain(D), is formed on the isolation region in the substrate(11). An oxide layer(13) is doped on the whole silicon wafer(11). A TEOS(Tetrathylorthosilicate) group of BPSG(Borophosphosilicate) layer(14) is vaporized on the substrate(11) using an APCVD(Atmospheric Pressure Chemical Vapor Deposition) or a SACVD(Sub-Atmospheric Chemical Vapor Deposition) method. Executing N2O plasma process on the BPSG layer(14), a nitride layer(15) is built to protect contacting the BPSG layer(14) with air. The semiconductor substrate(11) is loaded into a furnace. After densely process of the BPSG layer(14) by annealing, some part of the BPSG layer(14) is removed by CMP(Chemical Mechanical Polish) method.
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