SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a silicon film which is excellent in crystallinity and controlled in the direction of crystal growth and to form a semiconductor device by the use of the above silicon film. SOLUTION: A metal element (e.g. nickel element) which selectively promotes the crystallization of an amorphous silicon film is introduced into an amorphous silicon film formed on a glass substrate. Then, the glass substrate is subjected to a thermal treatment, by which a crystal growth starts taking place from a region where metal element is introduced in a direction in parallel with the lengthwise direction of the substrate. The crystal growth happens in a (111) direction. The substrate is lower in conductivity in a (111) axial direction than the other directions. A device is so formed as to enable carriers to move in the direction of crystal growth, by which the device of high electric properties can be obtained.