| 摘要 |
PURPOSE: To stabilize the resistance of bit line contact by obtaining the contact on an element separating area through plug-like local wiring using phosphorus- doped polysilicon for a transistor active area. CONSTITUTION: The polysilicon plug 9 of a memory cell section 100 is formed by using phosphorus-doped polysilicon. Since plug-like local wiring 25 using phosphorus-doped polysilicon is used for an N-channel transistor section 120 and bit line contact 26 can be obtained on an element separating oxide film by means of the local wiring 25, the layout margin of a narrow transistor active area 24 can be increased like the spot A of an N-channel transistor section 120. Therefore, the resistance of the bit line contact 26 can be stabilized.
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