| 摘要 |
The present invention provides a method for forming a dual giant magnetoresistive sensor. First and second spin valves are first formed and arranged such that a dielectric layer is positioned between the first and the second spin valves. The first spin valve has a plurality of layers including a first antiferromagnetic layer and a first pinned layer. The second spin valve has a plurality of layers including a second antiferromagnetic layer and a second pinned layer. First and second currents are supplied respectively to first and second spin valves. The first current generates a first magnetic field on the first pinned layer that orients a magnetization of the first pinned layer in a first desired direction. The second current generates a second magnetic field on the second pinned layer that orients a magnetization of the second antiferromagnetic layer in a second desired direction. While continuing to supply the first and the second currents, the dual giant magnetoresistive sensor is cooled from a temperature greater than Néel temperatures of both first and second antiferromagnetic layers to a temperature below the Néel temperature of both first and second antiferromagnetic layers.
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