| 摘要 |
PURPOSE:To form a transparent conductive film with extremely low resistance by using a conductive metal oxide sintered body consisting of mainly hafnium and/or niobium-containing indium oxide. CONSTITUTION:In the case that conductivity of indium oxide is increased by doping a different kind element, the conductivity is determined by electron density and mobility of the indium oxide. When a different kind element is doped in the indium oxide, electron density of the indium oxide is increased and the conductivity is improved, but if the content of the dopant is increased excessibly, the electron mobility is lowered and conductivity decreased again. Since not only the electron density is increased but the decrease of electron mobility in the indium oxide is suppressed by doping hafnium and/or niobium, just like tin, they can be an excellent dopant. |
