MANUFACTURING METHOD OF A SILICON WAFER HAVING A CONTROLLED BMD CONCENTRATION IN THE BULK AND A GOOD DZ LAYER

摘要

In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree.C to 1,000.degree.C at a rate of 15-1,000.degree.C/min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree.C to 980.degree.C for 0.5-60 minutes.