METHOD FOR MANUFACTURING A TUNGSTEN BIT LINE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a tungsten bit line of a semiconductor device is provided to control a diffusion phenomenon of an oxide composition and an oxidizing phenomenon of a bit line caused by the diffusion through an interlayer dielectric between a capacitor and a bit line, by using an SiOn layer as a capping layer of the bit line in a tungsten bit line structure. CONSTITUTION: An inter-polysilicon insulating layer(12) and the first capping layer(13) are formed on a semiconductor substrate(11) having a lower structure such as a junction region and a word line. The first capping layer and inter-polysilicon insulating layer are etched to form a bit line contact exposing the junction region of the semiconductor substrate by a photolithography process using a photoresist layer for forming a bit line contact. A diffusion blocking layer(15) is formed on the entire structure having the bit line contact and is thermally processed. A tungsten layer(16) and an anti-reflection layer(17) are formed on the entire structure having the diffusion blocking layer to fill the bit line contact. The anti-reflection layer and tungsten layer are etched to form a tungsten bit line pattern by a photolithography process using the photoresist layer for forming the bit line. The second capping layer(18) having high compression stress is formed on the entire structure having the tungsten bit line pattern.