| 摘要 |
PURPOSE: A circuit for selecting a word line within a flash memory device is provided to prevent supplying an erasing voltage to a failed word line so that an over-erasing of failed memory cells to reduce failed flash memory devices. CONSTITUTION: A flash memory device includes a memory cell array, plural word lines, plural bit lines, a decoder, a word line selection circuit(400) and a repair information memory. The word line selection circuit(400) includes plural word line selectors(WLS0,,,WLS127). Each word line selector includes switching circuits(SC1,,,SC8) and level shifters(LS1,,,LS8). Each switching circuit(SC1,,,SC8) transmits one of a program voltage(Vpp), a ground voltage(VSS) and an erasing voltage(Vera), according to decoding addresses(nSS0,,,nSS127) of a first group and switch-control signals regarding a redundancy information. Each level shifter(LS1,,,LS8) transmits one of the program voltage(Vpp), a reading voltage(Vrea), the ground voltage(VSS) and erasing voltage(Vera) according to decoding addresses(PWL0,,,PWL7) and a voltage from a switching circuit(SC1). Here, each level shifter(LS1,,,LS8) prevents supplying the erasing voltage(Vera) to a failed word line.
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