| 摘要 |
PROBLEM TO BE SOLVED: To restrain generation of a dark current by a method wherein a light receiving part and a signal readout part are buried on a semiconductor substrate, and the thickness of the semiconductor substrate is set at a width in a specific value. SOLUTION: A light receiving part 3 which is composed of a first N-type region and a CCD channel 4 which is a signal readout part and which is composed of a second N-type region are buried and formed on a P-type wall layer 2 in a semiconductor substrate 0. The semiconductor substrate 0 is constituted so as to be provided with an N-type substrate 1 and the P-type well layer 2 which is formed on the N-type substrate 1. The thickness of the semiconductor substrate 0 is set at a thickness of 20 to 60μm by mechanically grinding a face on the opposite side of a face on which the light receiving part 3 and the CCD channel 4 are formed in the semiconductor substrate 0. That is to say, a part which is ground in this case is a part of the N-type substrate 1 in the semiconductor substrate 0 corresponding to the face on the opposite side of the face on which the light receiving part 3 and the CCD channel 4 are formed out of the semiconductor substrate 0. The thickness of the semiconductor substrate 0 at this time refers to a width indicated by X.
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