Charge pump circuit for integrated memory devices

摘要

A charge pump circuit for integrated memory devices includes a plurality of stages cascade connected between an input terminal having a first voltage reference and an output terminal. Each stage includes a boost capacitor and one PMOS transistor functioning as a pass transistor. Each PMOS transistor has conduction terminals connected between the previous stage and the next stage, and a control terminal receiving a drive signal. The pass transistors are driven with a voltage that has a ground value when they are to be turned on, and a voltage equal to the highest of the positive voltages involved when they are to be turned off. The highest of the positive voltages involved is the output from the charge pump.