SEMICONDUCTOR DEVICE HAVING SOURCE/DRAIN REGIONS PROTRUDED OVER A FIELD REGION AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device having source/drain regions protruded over a field region is provided to improve a characteristic, by reducing contact resistance of the source/drain regions while decreasing a junction leakage current. CONSTITUTION: A trench(42) is formed on a semiconductor substrate(40). An isolation layer(44) is formed on the trench, but the surface of the isolation layer is lower than that of the semiconductor substrate so that an upper side of the trench is exposed. An epitaxial layer is grown on the semiconductor substrate including a side of the trench while a part of the epitaxial layer is protruded over the isolation layer. A junction region(48) is formed on a surface layer of the semiconductor substrate. A metal layer is formed on the resultant structure having the epitaxial layer. A thermal process is performed regarding the resultant structure having the metal layer to form a metal silicide layer(52) of which a part is protruded from the junction region over the isolation layer.