发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent deterioration of electrode noise characteristics and increase in consumption power due to the flow of a high-frequency current to substrate resistor without allowing the inductance component of the wire bonding to be ignored when grounding an electrode pad for grounding by the wire bonding in a semiconductor device for high frequency. SOLUTION: A capacitor C1 that resonates with an inductance component Lb with a bonding wire for grounding a pad for grounding electrode is connected in series with the inductance component Lb at the operating frequency of a high-frequency device, thus preventing a high-frequency signal to flow to the substrate resistor at an operating frequency, improving the noise characteristics of the device, and minimizing consumption power.
申请公布号 JP2000332198(A) 申请公布日期 2000.11.30
申请号 JP19990137937 申请日期 1999.05.19
申请人 NEC CORP 发明人 FUJII HIROMOTO
分类号 H01L21/822;H01L21/02;H01L23/66;H01L27/04;H01L27/06 主分类号 H01L21/822
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