| 摘要 |
According to one embodiment, a semiconductor storage device (100) can provide an enhanced rate of defective sub-word line replacement by independently controlling the activation and deactivation of redundancy sub-word lines (Sw(1,0 to Sw(5,2))). Redundancy sub-word lines (Sw(1,0 to Sw(5,2))) can be connected to different redundancy sub-word drivers (114a to 114e). Sub-word selecting circuits (126-1 to 126-4) can generate 2-bit redundancy sub-word selecting signals S11 to S14 from sub-word selecting signals XN and XT and fuse output signals H11-H14 received from a fuse circuit 124. Redundancy sub-word selecting signals S11 to S14 can independently activate and deactivate redundancy sub-word lines (Sw(1,0 to Sw(5,2))) coupled to redundancy sub-word drivers (114a to 114e).
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