| 摘要 |
<p>The process for manufacturing a semiconductor device having a silicide diffused layer and a non-silicide diffused layer is shortened, and the non-silicide layer has an excellent uniformity and is stable. After ions are implanted so as to form source and drain diffused layers, rapid thermal oxidation is performed for a short time to activate ions and to form another oxide film. By etching a thermal oxide film (6) comprising the additionally formed oxide film including a passivation oxide film (3), a silicidization preventing oxide film (8) is formed. Over the whole surface including the surface of the silicidization preventing oxide film, a Ti film (9) is formed. After silicidizing annealing, unreacted Ti film (9) is removed. Thus, a diffused layer (4), which is a non-silicide layer having a high non-silicidicity, and a diffused layer (5) having a silicide layer (10) over the surface are formed.</p> |
