MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an LDD region almost without being limited by the aspect ratio of a gate electrode by selectively forming a film containing an impurity that imparts one conductivity type onto a semiconductor, applying laser beams through the impurity film and forming a semiconductor device in an impurity region. SOLUTION: A gate electrode 39 for an NMOS and a gate electrode 40 for a PMOS are formed selectively. The film 41 of phosphorus pentoxide and the film 42 of boron oxide are formed and patterned. An excimer laser is applied, and impurity elements in the films 41, 42 are diffused into a silicon substrate. An no-type impurity region 43 and a p-type impurity region 44 are formed. Thus, since the width L of an LDD is not limited by the height of the gate electrode, the aspect of the gate electrode can be increased. The width of the LDD can also be controlled extremely precisely within a range of 10-100 nm.