| 摘要 |
PROBLEM TO BE SOLVED: To prevent a channel current from being controlled by a drain voltage due to the modulation by stored holes of a potential distribution at a channel. SOLUTION: Three semiconductor layers, which are an undoped GaAs buffer layer 2, an undoped In0.2Ga0.8As buffer layer 3, and an undoped GaAs layer 4, are formed on a GaAs substrate 1 sequentially from the bottom, each of the three layers having a different band gap. A source electrode 6 is formed on the layer 4. Using the layer 3 whose band gap is the smaller as a channel, the electrode 6 is formed at the region where the wave functions of the electrons and holes which can exist in the layer 3 overlap each other.
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