| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent decrease in the SN ratio and to improve the conversion efficiency in a wavelength converting element, using semiconductor quantum dots. SOLUTION: Semicoductor quantum well layers 4 and semiconductor quantum dots 2 of the so-called 'type II' are laminated with barrier layers 3 interposed. Either electrons or holes are electrically injected into the semiconductor quantum dots 2, while the other electrons or holes are electrically injected into the semiconductor quantum well layers 4. A carrier injected into the semiconductor quantum dots 2 is excited through irradiation of IR rays 7, and the excited carrier is moved into the semiconductor quantum well layers 4 to recombine and to emit converted light 8 having higher energy than the incident IR rays 7.</p> |
