FORMATION OF SEMICONDUCTOR LAYER AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a forming method of a semiconductor layer, wherein an epitaxial layer can be formed even at low temperatures and a treatment device can be readily maintained when a semiconductor layer is subjected to selective crystal growth, and a manufacturing method of a semiconductor device wherein the formation method is used. SOLUTION: A forming method of a semiconductor layer has a process for forming a mask 3 with an opening part 2 for exposing the surface of a base layer 1 on the base layer 1 and a process for forming a semiconductor layer by performing selective crystal growth for a semiconductor 4 by a catalytic CVD method on the surface of the exposed base layer 1 inside the opening part 2 of the mask 3. Manufacturing method of a semiconductor device uses this forming method of a semiconductor layer.