| 摘要 |
The pattern exposure method formes a pattern by a combination of a reduction projection exposure system 10 and an electron beam exposure system 20. An optical strain in a region of a prescribed size exposed by the reduction projection exposure system 10 is measured by a coordinates detection system 30. A first pattern of a shot size is exposed by the reduction projection exposure system 10, and a second pattern to be superimposed on the first pattern is formed by the electron beam exposure system 20, correcting based on a correction value which is based on the optical strain in the region of the prescribed size measured by the coordinates detection system 30.
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