| 摘要 |
PROBLEM TO BE SOLVED: To realize excellent interface characteristics with no natural oxide film or impurity for improved device characteristics and reliability, by forming a polycrystal silicon film from an amorphous silicon film which can be formed at a low temperature, and forming a gate insulating film without exposing an active surface to an atmosphere after the polycrystal silicon film is formed. SOLUTION: With hydrogen gas introduced into a laser anneal chamber, the surface of a substrate 41 is irradiated with a laser beam suitable for the thickness of an amorphous silicon film 43 to form a polycrystal silicon film 44. After the substrate 41 is moved into a film-forming chamber, a first gate insulating film 45a (silicon dioxide film) of 30 nm is formed, and then a second gate oxide film 45b (silicon dioxide film) of 60 nm, on the surface of the polycrystal silicon film 44. Then a gate electrode film 46 of an alloy of molybdenum and tungsten is formed. Then the substrate 41 is implanted with boron, and after a p-type semiconductor region is pattern-formed again at a part of the polycrystal silicon film 44, phosphorus is implanted so that a n-type semiconductor region is formed at a part of the polycrystal silicon film 44.
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