| 摘要 |
PURPOSE: Semiconductor memory device and it's fabrication method is provide to prevent severe etching of dummy region and a contact and short, thereby preventing a bit line voltage. CONSTITUTION: Semiconductor memory device comprising a cell array region, a core/boundary region and dummy region are included on a semiconductor substrate(100); many gate electrode(104a) are formed on the substrate(100). forming a beat line contact pad(106a, 106b) and storage node contact pad(106c) on between the gate electrodes(104a), the beat line contact pad(106b) of dummy region has a narrower width than the beat line contact pad(106a) of the cell array region, an insulating film(108) is formed on the upper of the pads(106a-106c) including the gate electrode(104a). the contact hole(110a,110b) are formed on the surface of the beat line contact pad(106a) of the cell array region and the beat line contact pad(106b) of dummy region pierce through the insulating film(108); the width of contact hole(110a) formed on the upper of the beat line contact pad(106b) of dummy region is narrower than the width of contact hole(110b) formed on the upper of the beat line contact pad(106a) of the cell array region,
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