METHOD FOR FORMING VIA CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a via contact is to form a penetration prevention layer having a low resistance and preventing penetration of impurities between barrier substance layers upon forming the via contact, thereby lowering a via contact resistance and eliminating a defect in a semiconductor device. CONSTITUTION: A via contact hole is formed in an insulating layer(20) covering a metal layer(10) on a semiconductor device. Titanium is then deposited on the insulating layer to form the first barrier substance layer(30). Amorphous silicon is deposited on the first barrier substance layer and is annealed to convert a part of the amorphous silicon into a penetration prevention layer(60). The second barrier substance layer(40) is deposited on the penetration prevention layer and annealed to convert the remaining amorphous silicon into another penetration prevention layer. Thereafter, a tungsten layer(50) is deposited on the second barrier substance layer to bury the via contact hole.